9N80

FastSwitchingSpeed

9N80

9A,800VN-CHANNELPOWERMOSFET

9N80

9Amps,800VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC9N80isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecostumerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergy

9N80A

iscN-ChannelMOSFETTransistor

HFP9N80

800VN-ChannelMOSFET

IXFH9N80

HiPerFETPowerMOSFETs-N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fasti

IXFH9N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

IXFH9N80Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRatedLowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXFT9N80Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRatedLowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

SSFP9N80

StarMOSTPowerMOSFET

VDSS=800V ID25=7.5A RDS(ON)=1.2Ω Description StarMOSisanewgenerationofhighvoltageN–ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimisestheJFETeffect,increasespackingdensityandreducestheon-resistance.StarMOSalsoachievesfaster switchings

SSH9N80A

iscN-ChannelMOSFETTransistor

SSH9N80A

AdvancedPowerMOSFET

BVDSS=800V RDS(on)=1.3Ω ID=9A FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:25µA(Max.)@VDS=800V LowRDS(ON):1.000Ω(Typ.)