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90N06

DrainCurrent?밒D=90A@TC=25C

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ADM90N06Q

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM90N06QusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)with

ADVAdvanced (Shenzhen) Electronics Co.,Ltd

爱德微爱德微(深圳)电子有限公司

HM90N06D

N-ChannelTrenchPowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMS90N06

N-ChannelSuperTrenchPowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

KX90N06

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

MS90N06

LevelShiftingandDriverCircuits

BWTECH

Bruckewell Technology LTD

NP90N06VDK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NP90N06VDK

60V–90A–N-channelPowerMOSFETApplication:Automotive

Description NP90N06VDKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)1=5.3mMAX.(VGS=10V,ID=45A) LowCiss:Ciss=4000pFTYP.(VDS=25V) DesignedforautomotiveapplicationandA

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP90N06VDK

N-channelPowerMOSFET

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP90N06VLG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

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