SSF8206

MOSFET;

STG8206

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage.

STM8206

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage.

STV8206

MultistandardTVAudioProcessorandDigitalSoundDemodulator

GeneralDescription Overview TheSTV82x6iscomposedofthreemainparts: 1.TVSoundDemodulator:providesallthenecessarycircuitryforthedemodulationofaudiotransmissionsofEuropeanandAsianterrestrialTVbroadcasts.Thevarioustransmissionstandardsareautomaticallydetectedand

TPC8206

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSII)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications ●Smallfootprintduetosmallandthinpackage ●Lowdrain-sourceONresistance:RDS(ON)=40mΩ(typ.) ●Highforwardtransferadmittance:|Yfs|=7.0S(typ.) ●Lowleakagecurrent:IDSS=10µA(ma

TPC8206

DualN-Channel60V(D-S)175째CMOSFET

FEATURES •TrenchFET®powerMOSFET •100RgandUIStested

UP8206

BatteryProtectionIC

XF8206-VPM

POTTEDINDUCTOR