20V Dual N-Channel MOSFET

Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide va

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High Power and current handing capability

DESCRIPTION The SSF2816E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON)

文件：331.97 Kbytes 页数：5 Pages

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新硅能微电子

High Power and current handling capability

DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON)

文件：304.48 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

20V Dual N-Channel MOSFET

DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON)

文件：483.6 Kbytes 页数：4 Pages

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20V Dual N-Channel MOSFET

DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON)

文件：463.77 Kbytes 页数：4 Pages

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固锝电子

20V Dual N-Channel MOSFET

文件：576.67 Kbytes 页数：6 Pages

Good-Ark

固锝电子

20V Dual N-Channel MOSFET

文件：483.6 Kbytes 页数：4 Pages

Good-Ark

固锝电子

20V Dual N-Channel MOSFET

文件：463.77 Kbytes 页数：4 Pages

Good-Ark

固锝电子

MOSFET

Silikron

新硅能微电子

MOSFET

Silikron

新硅能微电子