SQ2319ES

Automotive P-Channel 40 V (D-S) 175 C MOSFET

SQ2319ES-T1-GE3

P-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

2319B-TACHG

HowtoUseThisCatalog

2319B-TACHG

Channelstyleheatsinkwithfoldedbackfins

Channelstyleheatsinkwithfoldedbackfinsforincreasedcoolingsurfacearea.Availablewithtinplatedsolderabletabsforeasyattachmenttotheprintedcircuitcard.

2319-P

NylonHoseClamps

2319-RC

HighCurrentToroidInductors

2319-RC

HighCurrentToroidInductors

2319-RC

HighCurrentToroidInductors

2319-RC

HighCurrentToroidInductorsHorizontalorverticalmount

2319-RC

HighCurrentToroidInductors

AM2319

MOSFETP-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION AM2319isavailableinaSOT-23Spackage. FEATURES -40V/-3A, RDS(ON)=80mΩ(max.)@VGS=-10V RDS(ON)=120mΩ(max.)@VGS=-4.5V ReliableandRugged LeadFreeandGreenDevicesAvailable (RoHSCompliant) AvailableinaSOT-23Spackage. APPLICATION LoadSwitch. 

AM2319A

MOSFETP-CHANNELENHANCEMENTMODEMOSFET

FEATURES FastSwitching 1.8VLowgatedriveapplications Improveddv/dtcapability 20V/4.2A, RDS(ON)ON)=35mΩ(Typ)@VGS=10V RDS(ON)ON)=43mΩ(Typ)@VGS=4.5V RDS(ON)ON)=57mΩ(Typ)@VGS=2.5V RDS(ON)ON)=80mΩ(Typ)@VGS=1.8V ReliableandRugged

AM2319P

P-ChannelLogicLevelMOSFET

P-ChannelLogicLevelMOSFET TheseminiaturesurfacemountMOSFETsutilizeHighCellDensityprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinpowermanagementcircuitry.Typicalapplicationsarevoltagecontrolsmallsignalswitch,power

AMS2319

SuperhighdensitycelldesignforextremelylowRDS(ON)

AN2319

Usingthe64-bitUIDincontactlessRFIDapplications

AP2319GN-HF

SimpleDriveRequirement,SmallPackageOutline

C-2319

InsulKrimp??FullyInsulatedPiggybackQuickDisconnect,Tab6.35mm(.250)by0.81mm(.032),10-12AWG,BlueInsulator,Tape

CM2319

T-13/4Bi-PinBase(.125)

T-13/4Bi-PinBase(.125)

CM2319

T-13/4Bi-PinBase(.125)

CPB2319-P

PiezoBuzzer(DC)