Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

文件：142.77 Kbytes 页数：11 Pages

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英飞凌

CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for:

文件：508.49 Kbytes 页数：10 Pages

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英飞凌

isc N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤290mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.84 Kbytes 页数：2 Pages

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无锡固电

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated

文件：257.62 Kbytes 页数：11 Pages

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英飞凌

CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for:

文件：508.49 Kbytes 页数：10 Pages

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英飞凌

CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated

文件：683.83 Kbytes 页数：11 Pages

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英飞凌

CoolMOSTM Power Transistor

文件：736.98 Kbytes 页数：11 Pages

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英飞凌

CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated

文件：683.83 Kbytes 页数：11 Pages

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英飞凌

CoolMOSTM Power Transistor

文件：736.98 Kbytes 页数：11 Pages

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英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ P7替代CoolMOS™ C3 。\n 800V CoolMOS™ C3 是英飞凌第三个 CoolMOS™ 系列产品，于 2001 年上市。C3 是产品组合中的主力军。 特定导通电阻低（R DS（on）* A）\n • 输出电容为（E oss）@ 400V 时，能量储存非常低\n• 低栅极电荷(Qg)\n• 经过实践认证的 CoolMOS™ 质量\n• 自1998年以来，英飞凌就开始大规模开发CoolMOS™ 技术\n\n优势:\n• 高效率，高功率密度\n• 超高成本/性能比\n• 高可靠性\n• 使用方便\n ;

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英飞凌