| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SPW | Indoor Selectable Output Speaker Strobes and Dual Voltage Evacuation Speakers | SYSTEMSENSORSystemsensor advanced ideas. Systemsensor advanced ideas. | SYSTEMSENSOR | |
SPW | Carbon Film Resistors, Special Purpose High Frequency Load (Tubes) | VishayVishay Siliconix 威世科技 | Vishay | |
CoolMOS Power Transistor
| InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
isc N-Channel MOSFET Transistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤700mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ANALOG BOTTOM PORT SISONIC™ MICROPHONE PRODUCTFEATURES •ExtendedOperatingTemperatureRange •MatchedSensitivity •LGAPackage •FlatFrequencyResponse •Lowphasedisortion •HighAOP •BottomPort •Ultra-StablePerformance •Omnidirectional •StandardSMDReflow | KNOWLESKnowles Knowles | KNOWLES | ||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvednoiseimmunity | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
isc N-Channel MOSFET Transistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤380mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Intrinsicfast-recoverybodydiode •Extremelowreverserecoverycharge •Pb-freeleadplating;RoHScompliant •Qualifiedaccordi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
isc N-Channel MOSFET Transistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤440mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
isc N-Channel MOSFET Transistor •DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤380mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
isc N-Channel MOSFET Transistor •DESCRITION •ImprovedTransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤380mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
isc N-Channel MOSFET Transistor •DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤280mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Intrinsic fast-recovery body diode
| InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Cool MOS Power Transistor CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fo | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
isc N-Channel MOSFET Transistor •DESCRITION •ImprovedTransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤280mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号：
SPW
- 制造商：
STIG RAVN
- 功能描述：
DRAWER UNIT WHITE
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
19+ |
TO-247 |
32000 |
原装正品,现货特价 |
询价 | ||
Infineon(英飞凌) |
22+ |
NA |
7000 |
原厂原装现货 |
询价 | ||
INFINEON |
21+ |
TO-247 |
3000 |
只有原装,支持实单 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-247 |
4500 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 | ||
INFINEON |
22+ |
NA |
846 |
原装正品支持实单 |
询价 | ||
INFINEON |
23+ |
TO-247 |
4500 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
AcmeElectricCorporation |
新 |
5 |
全新原装 货期两周 |
询价 | |||
Infineon(英飞凌) |
23+ |
TO2473 |
6000 |
询价 | |||
INFINEON |
2016+ |
TO-247 |
676 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
Infineon |
1728+ |
? |
11520 |
只做原装进口,假一罚十 |
询价 |
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