Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity

文件：143.83 Kbytes 页数：11 Pages

Infineon

英飞凌

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance

文件：287.2 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：IPAK；Package：TO-251；Isc N-Channel MOSFET Transistor

• FEATURES • With To-251(IPAK) package • New revolutionary high voltage technology • Ultra low gate charge • High peak current capability • Improved transconductance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIO

文件：320.55 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.0464 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：IPAK；Package：TO-251；isc N-Channel MOSFET Transistor

• FEATURES • With TO-251(IPAK) packaging • High speed switching • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • DC-DC converters • Motor control • Switching applications

文件：247.48 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

文件：895.21 Kbytes 页数：12 Pages

Infineon

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

文件：268.26 Kbytes 页数：11 Pages

Infineon

英飞凌

N-Channel 650V (D-S) Power MOSFET

文件：1.90706 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Cool MOS Power Transistor

文件：868.93 Kbytes 页数：13 Pages

Infineon

英飞凌

Cool MOS Power Transistor

文件：895.21 Kbytes 页数：12 Pages

Infineon

英飞凌