N-Channel 20 V (D-S) MOSFET

文件：1.05237 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N Channel Enhancement Mode MOSFET

DESCRIPTION ST3414 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applica

文件：377.22 Kbytes 页数：6 Pages

STANSON

司坦森

N Channel Enhancement Mode MOSFET

DESCRIPTION ST3414A is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applic

文件：667.53 Kbytes 页数：6 Pages

STANSON

司坦森

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

文件：153.48 Kbytes 页数：7 Pages

Samhop

三合微科