CoolMOSTM Power Transistor Features High peak current capability

Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS C3 designed for: • Notebook Adapter

文件：258.62 Kbytes 页数：10 Pages

Infineon

英飞凌

CoolMOSTM Power Transistor

• Low gate charge\n• Extreme dv/dt rated\n• High peak current capability\n• Qualified according to JEDEC1) for target applications\n• Pb-free lead plating; RoHS compliantCoolMOS C3 designed for:\n• Notebook Adapter;

Infineon

英飞凌

CoolMOS Power Transistor

Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant

文件：282.69 Kbytes 页数：10 Pages

Infineon

英飞凌

Optimized for 20-60kHz Switching

文件：188.7 Kbytes 页数：6 Pages

IXYS

艾赛斯

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：260.87 Kbytes 页数：2 Pages

ISC

无锡固电