Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) • Pb-free lead plating; RoHS complian

文件：374.19 Kbytes 页数：14 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

文件：339.45 Kbytes 页数：2 Pages

ISC

无锡固电

New revolutionary high voltage technology Ultra low gate charge

文件：1.30229 Mbytes 页数：15 Pages

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：625.63 Kbytes 页数：15 Pages

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7\n 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate charge

文件：1.30229 Mbytes 页数：15 Pages

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：625.63 Kbytes 页数：15 Pages

Infineon

英飞凌