Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

文件：159.83 Kbytes 页数：14 Pages

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Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) • Pb-free lead plating; RoHS complian

文件：374.19 Kbytes 页数：14 Pages

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英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

文件：339.45 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.1083 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode

Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed for: • Soft switching PWM Stages • LC

文件：340.77 Kbytes 页数：12 Pages

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N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.7Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.65 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

文件：338.87 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS??Power Transistor

Cool MOS™ Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

文件：332.37 Kbytes 页数：12 Pages

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英飞凌

New revolutionary high voltage technology Ultra low gate charge

文件：1.30229 Mbytes 页数：15 Pages

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英飞凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：625.63 Kbytes 页数：15 Pages

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