CoolMOSTM Power Transistor Features New revolutionary high voltage technology

Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances

文件：360.33 Kbytes 页数：10 Pages

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英飞凌

isc N-Channel MOSFET Transistor

• DESCRIPTION • High peak current capability • Ultra low gate charge • Ultra low effective capacitances • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.65Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device

文件：331.87 Kbytes 页数：2 Pages

ISC

无锡固电

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

CoolMOS™ P7替代CoolMOS™ C3 。\n 800V CoolMOS™ C3 是英飞凌第三个 CoolMOS™ 系列产品，于 2001 年上市。C3 是产品组合中的主力军。 特定导通电阻低（R DS（on）* A）\n • 输出电容为（E oss）@ 400V 时，能量储存非常低\n• 低栅极电荷(Qg)\n• 经过实践认证的 CoolMOS™ 质量\n• 自1998年以来，英飞凌就开始大规模开发CoolMOS™ 技术\n\n优势:\n• 高效率，高功率密度\n• 超高成本/性能比\n• 高可靠性\n• 使用方便\n ;

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英飞凌

CoolMOSTM Power Transistor

文件：490.95 Kbytes 页数：10 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • High peak current capability • Ultra low gate charge • Ultra low effective capacitances • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.65Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device

文件：339.39 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

文件：398.23 Kbytes 页数：10 Pages

Infineon

英飞凌