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AOB15S60

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=15A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.78Ω(Max) •100avalanchetested •MinimumLot-to-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOB15S60

600V15AaMOSpowerTransistor

GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB15S60

600V15AaMOSPowerTransistor

GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB15S60L

600V15AaMOSPowerTransistor

GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB15S60L

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=15A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.78Ω(Max) •100avalanchetested •MinimumLot-to-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT15S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT15S60

600V15AaMOSPowerTransistor

GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT15S60

600V15AaMOSpowerTransistor

GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT15S60L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOTF15S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOTF15S60

600V15AaMOSpowerTransistor

GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF15S60

600V15AaMOSPowerTransistor

GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF15S60L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOV15S60

DFN8X8PACKAGEMARKINGDESCRIPTION

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOW15S60

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=15A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.78Ω(Max) •100avalanchetested •MinimumLot-to-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOW15S60

600V15AaMOSPOWERTransistor

GeneralDescription TheAOW15S60&AOWF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOWF15S60

600V15AaMOSPOWERTransistor

GeneralDescription TheAOW15S60&AOWF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

CSP15S60S-A

SuperLowBarrierHighVoltagePowerRectifier

CUHS15S60

SchottkyBarrierDiodeSiliconEpitaxial

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

F15S60S

STEALTHTMIIRectifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格
SPE
22+
IPMDIP
31000
只做原正品!假一赔十公司现货
询价
SPE
20+
IPMDIP
15800
原装优势主营型号-可开原型号增税票
询价
吉林华微斯帕克/SPE
21+
IGBT
10000
询价
2022+
IGBT
8600
英瑞芯只做原装正品
询价
吉林华微斯帕克/SPE
2052+
IGBT
9852
只做原装正品现货!或订货假一赔十!
询价
吉林华微斯帕克/SPE
22+
IGBT
100000
代理渠道/只做原装/可含税
询价
吉林华微斯帕克/SPE
IGBT
90000
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
吉林华微斯帕克/SPE
21+
IGBT
880000
明嘉莱只做原装正品现货
询价
吉林华微斯帕克/SPE
23+
IGBT
6000
一级代理只做原装正品假一赔百
询价
-
21+
NA
15000
原厂VIP渠道,亚太地区一级代理商,可提供更多数量!
询价
更多SPE15S60F-A供应商 更新时间2024-5-17 16:10:00