SPD30P06PGMOS资料使用说明书原装现货-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
30P06	文件：971.54 Kbytes Page：7 Pages	P-Channel60V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
MSD30P06	文件：544.27 Kbytes Page：5 Pages	P-Channel60-V(D-S)MOSFET	BWTECHBruckewell Technology LTD 布吕克韦尔技术布吕克韦尔技术有限公司	BWTECH
MTB30P06	文件：247.61 Kbytes Page：10 Pages	TMOSPOWERFET30AMPERES60VOLTS TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS	MotorolaMotorola, Inc 摩托罗拉	Motorola
MTB30P06KFP	文件：414.85 Kbytes Page：8 Pages	P-ChannelEnhancementModePowerMOSFET	CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司	CYSTEKEC
MTB30P06V	文件：241.07 Kbytes Page：9 Pages	PowerMOSFET30Amps,60VoltsP-ChannelD2PAK ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MTB30P06V	文件：247.61 Kbytes Page：10 Pages	TMOSPOWERFET30AMPERES60VOLTS TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS	MotorolaMotorola, Inc 摩托罗拉	Motorola
MTB30P06V	文件：87.07 Kbytes Page：8 Pages	PowerMOSFET30Amps,60VoltsP?묬hannelD2PAK	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MTB30P06VG	文件：87.07 Kbytes Page：8 Pages	PowerMOSFET30Amps,60VoltsP?묬hannelD2PAK	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MTB30P06VG	文件：241.07 Kbytes Page：9 Pages	PowerMOSFET30Amps,60VoltsP-ChannelD2PAK ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MTBV30P06V	文件：241.07 Kbytes Page：9 Pages	PowerMOSFET30Amps,60VoltsP-ChannelD2PAK ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MTP30P06	文件：191 Kbytes Page：8 Pages	TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM P–ChannelEnhancement–ModeSiliconGateTMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60volt	MotorolaMotorola, Inc 摩托罗拉	Motorola
MTP30P06V	文件：191 Kbytes Page：8 Pages	TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM P–ChannelEnhancement–ModeSiliconGateTMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60volt	MotorolaMotorola, Inc 摩托罗拉	Motorola
MTP30P06V	文件：210.08 Kbytes Page：7 Pages	P?묬hannelPowerMOSFET	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MTP30P06V	文件：941.45 Kbytes Page：7 Pages	P-Channel60V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
MTP30P06VG	文件：210.08 Kbytes Page：7 Pages	P?묬hannelPowerMOSFET	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NCE30P06J	文件：269.51 Kbytes Page：6 Pages	NCEP-ChannelEnhancementModePowerMOSFET Description TheNCE30P06Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltages.Thisdeviceissuitableforuseasaloadswitching applicationandawidevarietyofotherapplications. GeneralFeatures ●VDS=-30V,ID=-6.5A RDS(ON	NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司	NCEPOWER
RFG30P06	文件：71.16 Kbytes Page：8 Pages	30A,60V,0.065Ohm,P-ChannelPowerMOSFETs TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyaredesignedforuseinapplicationssuchasswitchingregulators,sw	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
RFP30P06	文件：71.16 Kbytes Page：8 Pages	30A,60V,0.065Ohm,P-ChannelPowerMOSFETs TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyaredesignedforuseinapplicationssuchasswitchingregulators,sw	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
RFP30P06	文件：939.22 Kbytes Page：7 Pages	P-Channel60V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
SF30P06C	文件：679.5 Kbytes Page：2 Pages	GlassPassivatedSuperFastRecoveryRectifier	YENYOYenyo Technology Co., Ltd. 元耀科技元耀科技股份有限公司	YENYO

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市特莱科技有限公司	SPD30P06PGMOS	INFINEON/英飞凌	21+23+	TO-252	23568	16年电子元件现货供应商终端BOM表可配单提供样品	询价
深圳兆威电子有限公司	SPD30P06PGMOS(场效应管)	INFINEON/英飞凌	23+	TO-252	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市科雨电子有限公司	SPD30P06PGMOS(场效应管)	INFINEON/英飞凌	B326	TO-252-2	504	就找我吧!--邀您体验愉快问购元件!	询价
深圳市威尔健半导体有限公司	SPD30P06PGMOS(场效应管)	INFINEON/英飞凌	23+	TO-252-2	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	SPD30P06PGMOS(场效应管)	INFINEON/英飞凌	2022	TO-252-2	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市科恒伟业电子有限公司	SPD30P06PGMOS(场效应管)	INFINEON/英飞凌	21+	TO252	9850	只做原装正品假一赔十!正规渠道订货!	询价
深圳庞田科技有限公司	SPD30P06PGMOS(场效应管)	INFINEON/英飞凌	2023+	TO252	11000	AI智能識别、工業、汽車、醫療方案LPC批量及配套一站	询价
深圳市诺美思科技有限公司	SPD30P06PGMOS(场效应管)	INFINEON/英飞凌	22+/23+	TO252	9800	原装进口公司现货假一赔百	询价
深圳市河锋鑫科技有限公司	SPD30P06PGTM	INFINEON/英飞凌	2022+	TO-252	6530	原厂代理终端免费提供样品	询价
贸泽芯城（深圳）电子科技有限公司	SPD30P06PGTM	INFINEON/英飞凌	21+	TO-252	15000	原厂VIP渠道,亚太地区一级代理商,可提供更多数量!	询价

更多SPD30P06PGMOS供应商更新时间2024-5-26 10:36:00

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