Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

文件：279.9 Kbytes 页数：10 Pages

Infineon

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

文件：910.3 Kbytes 页数：11 Pages

Infineon

英飞凌

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08866 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for 600V CoolMOS™ C3 is 600V CoolMOS™ C6/E6 >> Click & go to 600V CoolMOS™ C6/E6 \n600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. ·Low specific on-state resistance\n ·(R on*A)\n ·Very low energy storage in output capacitance (E oss) @400V\n ·Low gate charge (Q g)\n ·Fieldproven CoolMOS™ quality\n ·CoolMOS™ technology has been manufactured by Infineon since 1998;

Infineon

英飞凌