| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
isc N-Channel MOSFET Transistor •FEATURES •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOS Power Transistor Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •Qualifiedforindustrialgradeapplicationsaccording | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Isc N-Channel MOSFET Transistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplication | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOS Power Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOS Power Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
20A,600VN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650-V(D-S)SuperJunctionMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
20A600VN-channelenhancedfieldeffecttransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
HiPerFASTIGBT VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity | IXYS IXYS Integrated Circuits Division | IXYS | ||
HITACHIEncapsulation,DIP16 | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •Qualifiedforindustrialgradeapplicationsaccording | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Usingnovelfield−stopIGBTtechnology Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.2V@IC=20A •HighInputImpedance •FastSwitching •AEC−Q101QualifiedtoAutomotiveRequirements •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
详细参数
- 型号：
SPA20N60C
- 功能描述：
MOSFET COOL MOS N-CH 600V 20.7A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2021+ |
TO220 |
16800 |
全新原装正品,自家优势现货 |
询价 | ||
IR |
2020+ |
TO-220 |
22000 |
全新原装正品 现货库存 价格优势 |
询价 | ||
22+ |
sot |
6600 |
正品渠道现货,终端可提供BOM表配单。 |
询价 | |||
INFINEON/英飞凌 |
24+ |
TO-220F |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
询价 | ||
INFINEON原装正品 |
23+ |
TO-220F |
12500 |
专注原装正品现货特价中量大可定 |
询价 | ||
INFINEON |
2020+ |
TO220F |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
INFINEO |
16+ |
TO-220 |
6242 |
全新原装/深圳现货库2 |
询价 | ||
INFINEON |
22+ |
TO-220 |
10000 |
英飞凌代理渠道,只做原装QQ:2369405325 |
询价 | ||
INFINEON |
23+ |
TO-220F |
65400 |
询价 | |||
INFINEON |
21+ |
TO-220F |
6000 |
专营原装正品现货,当天发货,可开发票! |
询价 |
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