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SPA17N80C3

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •PG-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) •Pb

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPA17N80C3

isc N-Channel MOSFET Transistor

•FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.29Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Idealforhigh-frequencyswitchingandsynchronousre

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA17N80C3

Cool MOS??Power Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPA17N80C3_11

Cool MOS??Power Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IXFH17N80Q

HiPerFETPowerMOSFETsQ-Class

HiPerFET™PowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •Fastswitching •MoldingepoxiesmeetUL94V-0flammabili

IXYS

IXYS Integrated Circuits Division

IXFH17N80Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFN17N80

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXFT17N80Q

HiPerFETPowerMOSFETsQ-Class

HiPerFET™PowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •Fastswitching •MoldingepoxiesmeetUL94V-0flammabili

IXYS

IXYS Integrated Circuits Division

SIHA17N80AE

ESeriesPowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Co(er)) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半导体

SIHA17N80AEF

EFSeriesPowerMOSFETWithFastBodyDiode

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Co(er)) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半导体

SIHA17N80E

iscN-ChannelMOSFETTransistor

·FEATURES ·Lowdrain-sourceon-resistance: RDS(ON)=0.29Ω(MAX) ·Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·DESCRITION ·SwitchingVoltageRegulators

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SIHA17N80E

ESeriesPowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •

VishayVishay Siliconix

威世科技威世科技半导体

SIHB17N80AE

ESeriesPowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Co(er)) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半导体

SIHB17N80E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SIHB17N80E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SIHG17N80AE

ESeriesPowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Co(er)) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半导体

SIHG17N80AEF

EFSeriesPowerMOSFETWithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半导体

SIHG17N80E

ESeriesPowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •

VishayVishay Siliconix

威世科技威世科技半导体

SIHG17N80E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SIHP17N80AEF

EFSeriesPowerMOSFETWithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    SPA17N80

  • 功能描述:

    MOSFET COOL MOS PWR TRANS 800V 17A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
22+
TO-220
88000
原装,现货
询价
22+
sot
6600
正品渠道现货,终端可提供BOM表配单。
询价
INFINEON原装正品
23+
TO-220F
12500
专注原装正品现货特价中量大可定
询价
INFINEON
2020+
TO220F
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
INFINEO
16+
TO-220
6147
全新原装/深圳现货库2
询价
INFINEON
15
TO-220F
6000
原装正品现货
询价
INFINEON
23+
TO-220F
65400
询价
IR
2020+
TO-220F
32000
原装正品,诚信经营。
询价
INFINEON/英飞凌
2021+
TO-220F
18199
原装进口假一罚十
询价
INFINEON
21+
TO-220F
5000
专营原装正品现货,当天发货,可开发票!
询价
更多SPA17N80供应商 更新时间2024-6-23 14:08:00