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SSF2369

PWMapplications

DESCRIPTION TheSSF2369usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. GENERALFEATURES ●VDS=-20V,ID=-3A RDS(ON)

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微电子新硅能微电子(苏州)有限公司

SSF2369

P-Channel20-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

TF2369

P-Channel30-V(D-S)MOSFET

GeneralFEATURE ●TrenchFETPowerMOSFET ●Leadfreeproductisacquired ●Surfacemountpackage APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓锋半导体深圳市拓锋半导体科技有限公司

TLV2369

Cost-Optimized,800-nA,1.8-V,Rail-to-RailI/OOperationalAmplifierwithZero-CrossoverDistortion

TI1Texas Instruments

德州仪器美国德州仪器公司

TLV2369IDGKR

Cost-Optimized,800-nA,1.8-V,Rail-to-RailI/OOperationalAmplifierwithZero-CrossoverDistortion

TI1Texas Instruments

德州仪器美国德州仪器公司

TLV2369IDGKT

Cost-Optimized,800-nA,1.8-V,Rail-to-RailI/OOperationalAmplifierwithZero-CrossoverDistortion

TI1Texas Instruments

德州仪器美国德州仪器公司

TLV2369IDR

Cost-Optimized,800-nA,1.8-V,Rail-to-RailI/OOperationalAmplifierwithZero-CrossoverDistortion

TI1Texas Instruments

德州仪器美国德州仪器公司

W2369

AdvancedDesignSystem(ADS)WirelessLibraries

KEYSIGHTKeysight Technologies

是德科技是德科技(中国)有限公司

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