SN74ABT640DWR.B中文资料德州仪器数据手册PDF规格书

State-of-the-Art EPIC-IIBE BiCMOS Design

Significantly Reduces Power Dissipation

ESD Protection Exceeds 2000 V Per

MIL-STD-883, Method 3015; Exceeds 200 V

Using Machine Model (C = 200 pF, R = 0)

Latch-Up Performance Exceeds 500 mA Per

JEDEC Standard JESD-17

Typical VOLP (Output Ground Bounce) < 1 V

at VCC = 5 V, TA = 25°C

High-Drive Outputs (–32-mA IOH,

64-mA IOL)

Package Options Include Plastic

Small-Outline (DW), Shrink Small-Outline

(DB), and Thin Shrink Small-Outline (PW)

Packages, Ceramic Chip Carriers (FK), and

Plastic (N) and Ceramic (J) DIPs

description

The ’ABT640 bus transceivers are designed for

asynchronous communication between data

buses. These devices transmit inverted data from

the A bus to the B bus or from the B bus to the

A bus, depending on the level at the directioncontrol

(DIR) input. The output-enable (OE) input

can be used to disable the device so that the

buses are effectively isolated.

To ensure the high-impedance state during power

up or power down, OE should be tied to VCC

through a pullup resistor; the minimum value of

the resistor is determined by the current-sinking

capability of the driver.

The SN54ABT640 is characterized for operation over the full military temperature range of –55°C to 125°C. The

SN74ABT640 is characterized for operation from –40°C to 85°C.