SMP2609

N-Channel Silicon Junction Field-Effect Transistors

SmallOutline(SurfaceMount)PackageDevices

2609B

2609BBroadbandPhotodiodeModule

Description The2609Bisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiber-opticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetobettercontro

2609B

BroadbandPhotodiodeModule

The2609Bisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiberopticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetobettercontrolofparasitic

2609C

2609CBroadbandPhotodiodeModule

Description The2609Cisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiber-opticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetocontrolofpa

AP2609GY-HF

SimpleDriveRequirement,SmallPackageOutline

AP2609GYT-HF

SimpleDriveRequirement,SmallSize&LowerProfile

CEC2609

DualEnhancementModeFieldEffectTransistor(NandPChannel)

20V,4.8A,RDS(ON)=38mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-3.0A,RDS(ON)=100mW@VGS=-4.5V. RDS(ON)=145mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. S2

CEH2609

DualEnhancementModeFieldEffectTransistor

FEATURES ■20V,3.5A,RDS(ON)=60mΩ@VGS=4.5V. RDS(ON)=80mΩ@VGS=2.5V. ■-20V,-2.5A,RDS(ON)=100mΩ@VGS=-4.5V. RDS(ON)=145mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapa

CEH2609A

DualEnhancementModeFieldEffectTransistor(NandPChannel)

20V,4A,RDS(ON)=45mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-2.8A,RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

FKN2609

P-Ch20VFastSwitchingMOSFETs

Description TheFKN2609isthehighcelldensitytrenched P-chMOSFETs,whichprovidesexcellentRDSON andefficiencyformostofthesmallpower switchingandloadswitchapplications. TheFKN2609meetstheRoHSandGreenProduct requirementwithfullfunctionreliabilityapproved.

FKUC2609

P-Ch20VFastSwitchingMOSFETs

Description TheFKUC2609isthehighcelldensitytrenched P-chMOSFETs,whichprovidesexcellentRDSON andefficiencyformostofthesmallpower switchingandloadswitchapplications. TheFKUC2609meetstheRoHSandGreen Productrequirementwithfullfunctionreliability approved.

IRS2609DSPBF

HALF-BRIDGEDRIVER

IRS2609DSPBF

HALF-BRIDGEDRIVER

IRS2609DSPBF

HALF-BRIDGEDRIVER

IRS2609DSTRPbF

HALF-BRIDGEDRIVER

KSC2609A

AudioFrequencyHighFrequencyPowerAmplifier

AudioFrequency HighFrequencyPowerAmplifier •ComplementtoKSA1220/KSA1220A

LM2609

NandP-ChannelEnhancementModePowerMOSFET

LTC2609

Quad16-/14-/12-BitRail-to-RailDACswithI2CInterface

LTC2609CGN

Quad16-/14-/12-BitRail-to-RailDACswithI2CInterface

LTC2609CGNPBF

Quad16-/14-/12-BitRail-to-RailDACswithI2CInterface