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24N40E

TMOSPOWERFET24AMPERES400VOLTSRDS(on)=0.16OHM

TMOSE−FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO

MotorolaMotorola, Inc

摩托罗拉

EPC24N40A

Upto110A460VacPhaseAngleController

TELEDYNE

Teledyne Technologies Incorporated

EPC24N40R

Upto110A460VacPhaseAngleController

TELEDYNE

Teledyne Technologies Incorporated

FDA24N40F

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDA24N40F

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDA24N40F

N-ChannelMOSFET,FRFET400V,23A,0.19廓

Description UniFET™MOSFETisFairchildSemiconductor®’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thebodydiode’sreverserecover

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP24N40

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP24N40

N-ChannelMOSFET400V,24A,0.175廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP24N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=24A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.175Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDPF24N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.175Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDPF24N40

N-ChannelMOSFET400V,24A,0.175廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IXFH24N40

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

MTW24N40E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.16Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTW24N40E

N?묬hannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTW24N40E

TMOSPOWERFET24AMPERES400VOLTSRDS(on)=0.16OHM

TMOSE−FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO

MotorolaMotorola, Inc

摩托罗拉

供应商型号品牌批号封装库存备注价格
IXYS
02+
TO-3
153
询价
BEL
20+
电路保护
29716
就找我吧!--邀您体验愉快问购元件!
询价
Bel
22+
NA
8338
加我QQ或微信咨询更多详细信息,
询价
BEL
2015+
保险丝
1963
询价
BEL
22+
保险丝
28600
只做原装正品现货假一赔十一级代理
询价
BEL
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
BEL
保险丝
893993
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
BEL
23+
保险丝
1963
全新原装正品现货,支持订货
询价
20+
NA
78
原厂原装现货 需要的来
询价
JST
2022
连接器
10000
全新、原装
询价
更多SMM24N40供应商 更新时间2024-9-22 15:30:00