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20S60FA

20.0AmpereInsulatedDualCommonCathodeUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

20S60FA

20.0AmpereInsulatedDualCommonCathodeSuperFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

AOB20S60

600V20AaMOSPowerTransistor

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB20S60

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) •100avalanchetested •MinimumLot-to-L

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOB20S60L

600V20AaMOSTMPowerTransistor

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB20S60L

600V20AaMOS

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK20S60

iscN-ChannelMOSFETTransistor

•FEATURES •WithTO-247packaging •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •PFCstages •Powersupply •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOK20S60

600V20AaMOSPowerTransistor

GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK20S60L

600V20AaMOS

GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK20S60L

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) •100avalanchetested •MinimumLot-to-L

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT20S60

600V20AaMOSPowerTransistor

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT20S60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT20S60L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT20S60L

600V20AaMOS

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF20S60

600V20AaMOSPowerTransistor

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF20S60

600V20AaMOS

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF20S60

N-Channel650-V(D-S)SuperJunctionMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOTF20S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOTF20S60L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOTF20S60L

600V20AaMOS

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

供应商型号品牌批号封装库存备注价格
昂斯美
23+
TO-247
10000
公司只做原装正品
询价
昂斯美
24+25+/26+27+
TO-247-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
昂斯美
24+
TO-247
12300
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
昂斯美
TO-247
22+
6000
十年配单,只做原装
询价
昂斯美
22+
TO-247
25000
只做原装进口现货,专注配单
询价
ZILOG
00+
SMD18
565
全新原装100真实现货供应
询价
ZILOG
22+
SOP18
2978
十年品牌!原装现货!!!
询价
ZILOG
15+
SOP
78
全新原装正品现货
询价
ZILOG
22+
SMD18
3257
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙
询价
ZILQG
SOP18
10000
自己现货
询价
更多SMK20S60供应商 更新时间2024-6-7 14:30:00