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TPV591

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TPV591isaCommonEmitterDeviceDesignedforHighLinearityClassATelevisionBandIVandVTransmitters, FEATURESINCLUDE: •GoldMetalization •EmitterBallasting

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

TPV591

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASITPV591isaCommonEmitterDeviceDesignedforHighLinearityClassATelevisionBandIVandVTransmitters. FEATURESINCLUDE: •GoldMetalization •EmitterBallasting

ASI

Advanced Semiconductor

UWDM591SA

UltraHi-RelUnderseaComponentFamilyFusedSingle-ModeWDM

OPLINK

OPLINK Communications Inc.

UWDM591SB

UltraHi-RelUnderseaComponentFamilyFusedSingle-ModeWDM

OPLINK

OPLINK Communications Inc.

VDD591LCTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

VDD591LNTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

VDD591MCTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

VDD591MNTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

VDD591SCTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

VDD591SNTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

产品属性

  • 产品编号:

    SMF591KJT

  • 制造商:

    TE Connectivity Passive Product

  • 类别:

    电阻器 > 片式电阻器 - 表面贴装

  • 系列:

    SMF, CGS

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 容差:

    ±5%

  • 功率 (W):

    5W

  • 成分:

    金属薄膜

  • 特性:

    阻燃涂层,安全

  • 温度系数:

    ±100ppm/°C

  • 工作温度:

    -55°C ~ 200°C

  • 封装/外壳:

    5329(13573 公制),J 形引线

  • 供应商器件封装:

    SMD

  • 大小 / 尺寸:

    0.531" 长 x 0.287" 宽(13.50mm x 7.30mm)

  • 高度 - 安装(最大值):

    0.280"(7.10mm)

  • 描述:

    RES SMD 91K OHM 5% 5W 5329

供应商型号品牌批号封装库存备注价格
TE Connectivity
2022+
原厂原包装
6800
全新原装 支持表配单 中国著名电子元器件独立分销
询价
TE
24+
con
35960
查现货到京北通宇商城
询价
ON
23+
SOD123-2
50000
全新原装正品现货,支持订货
询价
ON
2020+
SOD123-2
15000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ON
25+
SOD123-2
3803
询价
ON
23+
SOD123-2
12800
公司只有原装 欢迎来电咨询。
询价
ON
2023+
SOD123-2
8800
正品渠道现货 终端可提供BOM表配单。
询价
ON
24+
SOD123-2
18000
原装正品 有挂有货 假一赔十
询价
ON
21+
SOD123-2
15000
原装现货假一赔十
询价
CJ(江苏长电/长晶)
23+
SOD-123FL
100000
原装现货、价格优势、可开发票
询价
更多SMF591KJT供应商 更新时间2025-7-20 15:01:00