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SMCJ6040

5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors

DESCRIPTION: TheseTransientVoltageSuppressordevicesareaseriesofBi-directionalSiliconTransientSuppressorsusedinACapplicationswherelargevoltagetransientscanpermanentlydamagevoltage-sensitivecomponents. FEATURES: ●BIDIRECTIONAL ●1500WATTSPEAKPOWER ●VOLTAGERANGEFR

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SMCJ6040

Transient Voltage Suppressor

etc2List of Unclassifed Manufacturers

etc2未分类制造商

SMCJ6040A

5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors

DESCRIPTION: TheseTransientVoltageSuppressordevicesareaseriesofBi-directionalSiliconTransientSuppressorsusedinACapplicationswherelargevoltagetransientscanpermanentlydamagevoltage-sensitivecomponents. FEATURES: ●BIDIRECTIONAL ●1500WATTSPEAKPOWER ●VOLTAGERANGEFR

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SMCJ6040A

Transient Voltage Suppressor

etc2List of Unclassifed Manufacturers

etc2未分类制造商

SMCJ6040A/TR13

包装:卷带(TR) 封装/外壳:DO-214AB,SMC 类别:电路保护 TVS - 二极管 描述:TVS DIODE 9VWM 15.6VC DO214AB

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SMCJ6040AE3/TR13

包装:卷带(TR) 封装/外壳:DO-214AB,SMC 类别:电路保护 TVS - 二极管 描述:TVS DIODE 9VWM 15.6VC DO214AB

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SMCJ6040E3/TR13

包装:卷带(TR) 封装/外壳:DO-214AB,SMC 类别:电路保护 TVS - 二极管 描述:TVS DIODE 8.5VWM 16.2VC DO214AB

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT6040

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT6040AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT6040BN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT6040BN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT6040BNR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT6040BVFR

POWERMOSVFREDFET

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT6040BVFRG

POWERMOSVFREDFET

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT6040BVR

POWERMOSV

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

ADPOW

Advanced Power Technology

APT6040BVR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT6040HN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT6040SVFR

POWERMOSVFREDFET

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT6040SVFRG

POWERMOSVFREDFET

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT6040SVR

POWERMOSV

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

ADPOW

Advanced Power Technology

详细参数

  • 型号:

    SMCJ6040

  • 制造商:

    Microsemi Corporation

  • 功能描述:

    TVS SGL BI-DIR 8.5V 1.5KW 2PIN DO-214AB - Bulk

供应商型号品牌批号封装库存备注价格
MICROSEMI-美高森美
24+25+/26+27+
DO-214
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
Microsemi
1942+
N/A
908
加我qq或微信,了解更多详细信息,体验一站式购物
询价
Microsemi
20+/21+
DO-214AB
9500
全新原装进口价格优势
询价
Microsemi
19+
DO-214AB
200000
询价
Microsemi
2023+
DO-214AB
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
Microsemi
2023+
DO-214AB
18800
芯为科技只做原装
询价
Microsemi
2022+
DO-214AB
20000
只做原装进口现货.假一罚十
询价
Microsemi
DO-214AB
88000
一级代理 原装正品假一罚十价格优势长期供货
询价
Microsemi
DO-214AB
6000
原装现货,长期供应,终端可账期
询价
更多SMCJ6040供应商 更新时间2024-5-24 16:16:00