丝印：3ADK；Package：SMA；3000 W TVS in SMC

Features • Peak pulse power: – 3000 W (10/1000 μs) – up to 40 kW (8/20 μs) • Stand-off voltage range from 5 V to 188 V • Unidirectional and bidirectional types • Low leakage current: 0.2 μA at 25 °C • Operating Tj max: 175 °C • JEDEC registered package outline • Resin meets UL94, V0 • Le

文件：672.58 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

3000 W、70 V TVS，SMC封装

The SMC30J TVS series are designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2, MIL STD 883 Method 3015, and electrical overstress such as IEC 61000-4-4 and 5. They are used for surges below 3000 W 10/1000 μs.\n\n This planar technology makes it compati • Peak pulse power: \n•3000 W (10/1000 μs) \n•up to 40 kW (8/20 μs) \n• Unidirectional and bidirectional types \n• Operating Tj max: 175 °C \n• Lead finishing: matte tin plating;

ST

意法半导体

3000 W TVS in SMC

Features • Peak pulse power: – 3000 W (10/1000 μs) – up to 40 kW (8/20 μs) • Stand-off voltage range from 5 V to 188 V • Unidirectional and bidirectional types • Low leakage current: 0.2 μA at 25 °C • Operating Tj max: 175 °C • JEDEC registered package outline • Resin meets UL94, V0 • Le

文件：672.58 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through

文件：23.24 Kbytes 页数：2 Pages

SEME-LAB

Seme LAB