高压线性驱动-恒流

SM2086EK是一款双通道递进式LED线性恒流控制芯片。芯片集成了700V高压 MOSFET，采用独特创新的器件工艺技术，具有优越的抗雪崩击穿及浪涌能力，在外围无保护器件时可通过650V雷击浪涌测试，内置过温保护功能，提升系统应用可靠性。 •本司专利的恒流控制技术\n•支持输入电压：120Vac/220Vac\n•支持高PF方案：PF>0.9\n•支持低PF方案：PF>0.5，无频闪\n•芯片间输出电流偏差•内部集成700V高压MOS管，无需任何保护器件可通过650V雷击\n•适应较宽的输入电压范围±20%\n•无需磁性元器件可满足EMI应用\n•具有过温调节功能\n•封装形式：ESOP8;

SunMoon

明微电子

Low Noise pHEMT GaAs FET 0.1 - 12 GHz Operation

Product Description Sirenza Microdevices’ SPF-2086T is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excellent output TO

文件：583.24 Kbytes 页数：5 Pages

SIRENZA

Low Noise pHEMT GaAs FET

[Sirenza] Product Description Sirenza Microdevices’ SPF-2086TK is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excelle

文件：583.11 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Low Noise pHEMT GaAs FET 0.1 - 6 GHz Operation

Product Description Sirenza Microdevices’ SPF-2086TK is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excellent output T

文件：583.86 Kbytes 页数：5 Pages

SIRENZA