N-Channel Enhancement Mode MOSFET

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大中集成电路

N-Channel Enhancement Mode MOSFET

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SINOPWER

大中集成电路

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 58A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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ISC

无锡固电

N-Channel Enhancement Mode MOSFET

文件：239.02 Kbytes 页数：10 Pages

SINOPWER

大中集成电路