| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
DoubleCoatedFoamTape | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | 3M | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
192kHz24-BitStereo?誇DACwith2VrmsOutput | AKMAKM Semiconductor Inc. 旭化成微电子旭化成微电子株式会社 | AKM | ||
192kHz24-BitStereo?誇DACwith2VrmsOutput | AKMAKM Semiconductor Inc. 旭化成微电子旭化成微电子株式会社 | AKM | ||
192kHz24-BitStereo | AKMAKM Semiconductor Inc. 旭化成微电子旭化成微电子株式会社 | AKM | ||
192kHz24-BitStereo?誇DACwith2VrmsOutput | AKMAKM Semiconductor Inc. 旭化成微电子旭化成微电子株式会社 | AKM | ||
AK4430EvaluationBoardRev.1 | AKMAKM Semiconductor Inc. 旭化成微电子旭化成微电子株式会社 | AKM | ||
N-Channel30-V(D-S)MOSFET | AnalogPower Analog Power | AnalogPower | ||
DesigninganNFCAndroidApplicationforM24SRandM24LRdevices | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO4430/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgateresistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebookCPUcorepowerconversion. AO4430andAO4430 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelMOSFET ■Features ●VDS(V)=30V ●ID=18A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO4430/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgateresistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebookCPUcorepowerconversion. AO4430andAO4430 | WHXPCBshenzhen wanhexing Electronics Co.,Ltd 万和兴电子深圳万和兴电子有限公司 | WHXPCB | ||
N-Channel30-V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelMOSFET ■Features ●VDS(V)=30V ●ID=18A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO4430/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgateresistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebookCPUcorepowerconversion. AO4430andAO4430 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
SimpleDriveRequirement,FastSwitchingCharacteristic | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
Ultra_LowOn-resistance,SimpleDriveRequirement | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-ChannelEnhancementModeMOSFET Features •30V/12.5A, RDS(ON)=4.5mΩ(typ.)@VGS=10V RDS(ON)=7mΩ(typ.)@VGS=5V •SuperHighDenseCellDesign •ReliableandRugged •SOP-8Package •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryP | ANPECAnpec Electronics Corp 茂达电子 | ANPEC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PLESSEY |
16+ |
DIP8 |
2866 |
原装现货假一罚十 |
询价 | ||
PLESSEY |
2020+ |
DIP8 |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
23+ |
N/A |
58600 |
一级代理放心采购 |
询价 | |||
SLKOR/萨科微 |
30000 |
原装现货,全系列可订货 |
询价 | ||||
IR |
22+ |
S0P |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
S0P |
8000 |
只做原装现货 |
询价 | ||
GPS |
08+ |
DIP |
4 |
特价热销现货库存100%原装正品欢迎来电订购! |
询价 | ||
GPS |
DIP8 |
34 |
询价 | ||||
PSSR |
24+ |
DIP8 |
5000 |
只做原装公司现货 |
询价 | ||
PSSR |
23+ |
DIP-8 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 |
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