SKY67014-396LF数据手册RF/IF射频/中频RFID的射频放大器规格书PDF

描述 Description

Please note: SKY67014-396LF is being discontinued and is not recommended for new designs. The suggested replacement are SKY67022-396LF, SKY67023-396LF, SKY67153-396LF, SKY67159-396LF

The SKY67014-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias and on-die stability structures enabling simple external matching. The advanced GaAs pHEMT enhancement mode process provides excellent return loss, lower noise, and higher linearity performance compared to SiGe LNAs.

The internal active bias circuitry provides stable performance over temperature, and process variation. The device offers the ability to externally adjust supply current. Noise figure of 1.0 dB, 12 dB gain and 18 dBm OP1dB are achievable at 2.45 GHz with 3.3V supply and only 5 ma of bias current, The device can also be biased from 1.8 to 5V and will achieve a OIP3 of 28 dBm with 5V supply and 18 mA bias current.

The SKY67014-396LF operates in the frequency range of 1.5 to 3.0 GHz and the associated evaluation board is optimized for operation in the 2.4 GHz ISM band. The amplifier is manufactured in a compact, 2 x 2 mm, 8-pin Dual Flat No-Lead (DFN) package.

特性 Features

• Low NF: 0.9 dB @ 2.45 GHz
• Gain: 12 dB @ 2.45 GHz
• Adjustable supply current for higher IIP3
• Improved NF and linearity compared to SiGe LNAs
• Incorporates on-die stability structures
• Miniature DFN (8-pin, 2 x 2 mm) package (MSL1 @ 260 °C per JEDEC J-STD-020)

简介

SKY67014-396LF属于RF/IF射频/中频RFID的射频放大器。由制造生产的SKY67014-396LF射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。