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首页>SIS413DN-T1-GE3>芯片详情
SIS413DN-T1-GE3_VISHAY/威世科技_MOSFET -30V 9.4mOhm@10V -18A P-Ch G-III宇创芯商城
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产品属性
- 类型
描述
- 型号:
SIS413DN-T1-GE3
- 功能描述:
MOSFET -30V 9.4mOhm@10V -18A P-Ch G-III
- RoHS:
否
- 制造商:
Vishay Semiconductors
- 晶体管极性:
P-Channel
- 汲极/源极击穿电压:
30 V
- 闸/源击穿电压:
+/- 20 V
- 漏极连续电流:
18 A 电阻汲极/源极
- RDS(导通):
9.4 mOhms
- 配置:
Single
- 最大工作温度:
+ 150 C
- 安装风格:
SMD/SMT
- 封装/箱体:
PowerPAK 1212-8
- 封装:
Reel
供应商
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