订购数量 | 价格 |
---|---|
1+ |
首页>SIR880DP-T1-GE3>芯片详情
SIR880DP-T1-GE3_VISHAY/威世科技_MOSFET 80V 5.9mOhm@10V 60A N-Ch MV T-FET柒号芯城
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SIR880DP-T1-GE3
- 功能描述:
MOSFET 80V 5.9mOhm@10V 60A N-Ch MV T-FET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
相近型号
- SIR878BDP-T1-GE3
- SIR888DP
- SIR878ADP-T1-GE3
- SIR876BDP-T1-RE3
- SIR890DP-T1-E3
- SIR876BDP-T1-GE3
- SIR890DP-T1-GE3
- SIR892DP3
- SIR876ADP-T1-GE3
- SIR91-21C/TR10
- SIR876ADP-GE3
- SIR-935
- SIRA00DP-GE3
- SIR873DP-T1-GE3
- SIRA00DP-T1-GE3
- SIR872DP-T1-GE3
- SIR872ADP-T1-RE3
- SIRA01DP-T1-GE3
- SIR872ADP-T1-GE3
- SIR871DP-T1-GE3
- SIRA02DP-GE3
- SIR870DP-T1-GE3
- SIRA02DP-T1-GE3
- SIR870DP
- SIR870BDP-T1-RE3
- SIRA04DP
- SIR870ADP-T1-GE3
- SIRA04DP-T1-GE3
- SIR870ADP
- SIR866DP-T1-GE3
- SIRA04DP-T1-GE3-L
- SIR864DP-T1-GE3
- SIRA06DDP-T1-UE3
- SIR862DP-T1-GE3
- SIRA06DP
- SIR850DP-T1-GE3
- SIRA06DP-T1-GE3
- SIR846DP-T1-GE3
- SIRA10BDP-T1-GE3
- SIR846BDP-T1-RE3
- SIR846BDP-T1-GE3
- SIRA10DP-T1-GE3
- SIR846ADP-T1-GE3
- SIRA12BDP-T1-GE3
- SIR846ADP
- SIRA12DP-T1-GE3
- SIR840DP-T1-GE3
- SIR840DP
- SIRA12DP-T1-GE3-G
- SIR836DP-T1-GE3