SIHF634N规格书应用电路供应价格威世科技-114ic电子网

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SIHF634N	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技	Vishay
SIHF634N-E3	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技	Vishay
SIHF634NL	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技	Vishay
SIHF634NL-E3	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技	Vishay
SIHF634NS	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技	Vishay
SIHF634NS-E3	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技	Vishay
SIHF634NSTL	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技	Vishay
SIHF634NSTL-E3	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技	Vishay
SIHF634NSTR	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技	Vishay
SIHF634NSTR-E3	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技	Vishay
634	文件：141.01 Kbytes Page：2 Pages	LowFrequencies	OSCILENT Oscilent Corporation	OSCILENT
634	文件：33.49 Kbytes Page：1 Pages	T-1SubminiatureLamps T-1¼SubminiatureLamps	GILWAY Gilway Technical Lamp	GILWAY
634HHU	文件：249.79 Kbytes Page：1 Pages	DCaxialfans	EBMPAPST ebm-papst	EBMPAPST
634M-SERIES	文件：330.91 Kbytes Page：3 Pages	634MSeriesD-SubConnectors\|MachinedPins\|HighDensityThreeContactRowswith0.350(8.89mm)FootprintRightAngleBend\|Receptacle Features HighDensityThreeContactRowswith.350(8.89mm)FootprintRightAngleBendwithMachinedContacts .090(2.29mm)ContactSpacing0.078(1.98mm)RowSpacing PlugandReceptaclein15,26,44or62ContactSizes PinandSocketContactMatingDesignwithP.C.TailTermination M	EDACEDAC, All Rights Reserved. 亚得电子亚得电子（东莞）有限公司	EDAC
ACE634	文件：1.02993 Mbytes Page：9 Pages	20VComplementaryEnhancementModeFieldEffectTransistor Description TheACE634combinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforloadswitchandbatteryprotectionapplications. Features •N-Channel VDS(V)=20V ID=4A RDS(ON)	ACE ACE Technology Co., LTD.	ACE
AFBR-x634Z	文件：464.42 Kbytes Page：11 Pages	DC-50MBdVersatileLinkFiberOpticTransmitter	BOARDCOMBroadcom Corporation. 博通公司博通半导体	BOARDCOM
AWM634TX	文件：257.519 Kbytes Page：10 Pages	2.4GHzVideo/AudioRFModule	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
BD634	文件：244.97 Kbytes Page：2 Pages	iscSiliconPNPPowerTransistor DESCRIPTION ·DCCurrentGain-:hFE=40(Min.)@IC=-25mA ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=-45V(Min.) ·ComplementtoTypeBD633 APPLICATIONS ·Designedforamplifierandswitchingapplications.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
BL-HG634A	文件：802.66 Kbytes Page：1 Pages	SURFACEMOUNTCHIPLEDLAMPS	YSTONEYellow Stone Corp 早安股份早安股份有限公司	YSTONE
BL-HG634C	文件：439.38 Kbytes Page：1 Pages	SURFACEMOUNTCHIPLEDLAMPS	YSTONEYellow Stone Corp 早安股份早安股份有限公司	YSTONE

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详细参数

型号：
SIHF634N
制造商：
VISHAY
制造商全称：
Vishay Siliconix
功能描述：
Power MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市芯祺盛科技有限公司	SIHF634N	VISHAY	1746+	TO220F	8862	深圳公司现货!特价支持工厂客户!提供样品!	询价
深圳市百视威讯电子科技有限公司	SiHF634S		23+	N/A	35800	正品授权货源可靠	询价
深圳市宏捷佳电子科技有限公司	SiHF634S	Vishay	23+	TO-263	33500	全新原装真实库存含13点增值税票!	询价
中天科工半导体（深圳）有限公司	SiHF634S	Vishay	20+	TO-263	36900	原装优势主营型号-可开原型号增税票	询价
深圳市安富世纪电子有限公司	SiHF634S	VISHAY/威世	21+	TO-263	50000	终端可免费提供样品,欢迎咨询	询价
深圳市仟禧电子有限公司	SiHF634S	VISHAY/威世	22+	TO-263	20000	保证原装正品,假一陪十	询价
深圳市国宇半导体科技有限公司	SiHF634S	VISHAY/威世	23+	TO-263	22500	公司只做原装正品	询价
深圳市威尔健半导体有限公司	SiHF634S	VISHAY/威世	23+	TO-263	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	SiHF634S	VISHAY/威世	21+	TO-263	10000	原装现货假一罚十	询价
深圳廊盛科技有限公司	SiHF634S	VISHAY/威世	2022	TO-263	80000	原装现货,OEM渠道,欢迎咨询	询价

更多SIHF634N供应商更新时间2024-5-2 15:48:00

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