| 订购数量 | 价格 |
|---|---|
| 1+ |
首页>Si4953ADY-T1-GE3>芯片详情
Si4953ADY-T1-GE3_VISHAY/威世_MOSFET 30V 3.9A 2.0W 53mohm @ 10V诺美思科技
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
Si4953ADY-T1-GE3
- 功能描述:
MOSFET 30V 3.9A 2.0W 53mohm @ 10V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
相近型号
- SI4953A-T1-E3
- SI4953ADY-T1-E
- SI4953BDY-T1-E
- SI4953ADY-T1
- SI4953BDY-T1-E3
- SI4953ADY1-E3
- SI4953BDY-T1-GE3
- SI4953ADY
- SI4953DY
- SI4953A
- SI4953DY/ADY
- SI4953/TSM4953
- SI4953DY/ADY1-E3
- SI4953
- SI4953DY1-E3
- SI4953DY-E3
- SI4953DY-NL
- SI4952DY-T1-GE3
- SI4952DYT1GE3
- SI4953DYT1
- SI4953DY-T1
- SI4952DY-T1-E3
- SI4953DY-T1-E3
- SI4952DYT1E3
- SI4953DY-T1-E34953
- SI4952DY-T1
- SI4953DY-T1-E3-VB
- SI4952DY
- SI4952
- SI4950DY-T1-E3
- SI4953DY-T1-GE3
- SI4949EY-T1-E3
- SI4949EY-T1
- SI4953DY-TI
- SI4949EY
- SI4953DY-TI-E3
- SI4949DY-T1-E3
- SI4949DY
- SI4953M
- SI4948-T1-E3
- SI4948PDY-T1-GE3
- SI4955
- SI4955DY
- SI4948PDY
- SI4955DY-T1
- SI4948P
- SI4955DY-T1-E3
- SI4948EY-T1-GE3
- SI4955DY-T1-GE3
- SI4959



