订购数量 | 价格 |
---|---|
1+ |
首页>SI3445DV-T1-E3>详情
SI3445DV-T1-E3_VISHAY/威世科技_MOSFET 8V 5.6A 2W瀚佳科技2部
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SI3445DV-T1-E3
- 功能描述:
MOSFET 8V 5.6A 2W
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
相近型号
- SI3445DV1
- SI3445DV
- SI3445BDV
- SI3445DV-T1SOT163-45
- SI3445ADV-T1-GE3
- SI3445DV-T2
- SI3445ADVT1GE3
- SI3446
- SI3446ADV-T1
- SI3445ADV-T1-E3
- SI3446ADVT1E3
- SI3445ADVT1E3
- SI3446ADV-T1-E3
- SI3445ADV-T1
- SI3445ADV
- SI3446ADVT1GE3
- SI3445
- SI3446ADV-T1-GE3
- SI3444DV-T1-GE3
- SI3444DV-T1-E3
- SI3446BDV
- SI3443TRF
- SI3446BDV-T1-GE3
- SI3443TR
- SI3446DV
- SI3443DYTRPBF
- SI3446DV-NL
- SI3446DV-T1
- SI3443DV-Y1
- SI3446DV-T1-E3
- SI3446DV-T1-E3IC
- SI3443DVTRPBF-T1-E3
- SI3446DV-T1-GE3
- SI3443DVTRPBF
- SI3443DVTRF
- SI3443DVTR)
- SI3446DV-TI
- SI3446DV-TI-E3
- SI3443DV-TR
- SI3447
- SI3443DVTR
- SI3447BDS
- SI3443DV-TI
- SI3447BDV
- SI3443DV-TE3
- SI3447BDV/T1/E3
- SI3443DV-T5
- SI3447BDV-T1
- SI3443DV-T2
- SI3447BDVT1E3