首页 >SI2312-TP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | SKTECHNOLGY | ||
N-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中集成电路大中集成电路股份有限公司 | SINOPWER | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中集成电路大中集成电路股份有限公司 | SINOPWER | ||
N-ChannelEnhancementModePowerMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
Pushbuttonswitch,sideactuation,illumination | APEX-ELECTRONICS Apex Electronics Co., Ltd | APEX-ELECTRONICS | ||
Pushbuttonswitch,sideactuation,illumination | APEX-ELECTRONICS Apex Electronics Co., Ltd | APEX-ELECTRONICS | ||
20VN-ChannelMOSFET DESCRIPTION TheSSF2312usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GENERALFEATURES ●VDS=20V,ID=4.5A RDS(ON) | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
Batteryprotection DESCRIPTION TheSSF2312usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GENERALFEATURES ●VDS=20V,ID=4.5A RDS(ON) | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微电子新硅能微电子(苏州)有限公司 | SILIKRON | ||
N-channelEnhancement-modePowerMOSFET | SSC Silicon Standard Corp. | SSC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
