Photointerrupters(Reflective)

文件：274.49 Kbytes 页数：2 Pages

KODENSHI

可天士

Photointerrupters(Reflective)

Kodenshi

可天士

N-Channel 100 V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Fully lead (Pb)-free device • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • Up to 200 A maximum continuous drain current • 50 smaller footprint than D2PAK (TO-263) • 100 Rg and UIS tested • Material categorization:

文件：245.08 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技

N-Channel 40 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • 100 Rg and UIS tested • Qgd/Qgs ratio

文件：390.98 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世科技

N-Channel 100 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Tuned for the lowest RDS - Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Primary side switch • DC/DC converter • Motor drive switch • Boost conv

文件：191.41 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世科技