25 A, 250 V Fast Switching Silicon Controlled Rectifier

• Low-Level Gate Characteristics\n• IGT = 200 µA (Max) @ 25°C\n• Low Holding Current IH = 1 mA (Max) @ 25°C\n• Anode Common to Case\n• Hermetically Sealed\n• TX, TXV, S-Level Screening Available;

SSDI

25 AMPS 100 ??400 VOLTS FAST SWITCHING SILICON CONTROLLED RECTIFIER

文件：142.83 Kbytes 页数：2 Pages

SSDI

25 A, 250 V Fast Switching Silicon Controlled Rectifier

• Low-Level Gate Characteristics\n• IGT = 200 µA (Max) @ 25°C\n• Low Holding Current IH = 1 mA (Max) @ 25°C\n• Anode Common to Case\n• Hermetically Sealed\n• TX, TXV, S-Level Screening Available;

SSDI

REGULATING PULSE WIDTH MODULATOR

Description The SG1525A/1527A series of pulse width modulator integrated circuits are designed to offer improved performance and lower external parts count when used to implement all types of switching power supplies. The on-chip +5.1 V reference is trimmed to ±1 initial accuracy and the input co

文件：135.8 Kbytes 页数：7 Pages

Microsemi

美高森美

REGULATING PULSE WIDTH MODULATOR

文件：241.28 Kbytes 页数：7 Pages

Microsemi

美高森美

REGULATING PULSE WIDTH MODULATORS

DESCRIPTION The SG3525Aseries of pulse width modulator integrated circuits are designed to offer improved performance and lowered external parts count when used in designing all types of switching power supplies. The on-chip + 5.1 V reference is trimmed to ± 1 and the input common-mode range of

文件：117.88 Kbytes 页数：12 Pages

STMICROELECTRONICS

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