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零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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GaAlAs-Lumineszenzdiode GaAlAsInfraredEmitter Features •Fabricatedinaliquidphaseepitaxyprocess •Cathodeiselectricallyconnectedtothecase •Highreliability •MatchesallSi-Photodetectors •Hermeticallysealedpackage •SamepackageasSFH216,SFH400andFH480 Applications | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | OSRAM | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SwitchModePower | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DSeriesPowerMOSFET FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DSeriesPowerMOSFETs FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit( | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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