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SFH460

GaAlAs-Lumineszenzdiode

GaAlAsInfraredEmitter Features •Fabricatedinaliquidphaseepitaxyprocess •Cathodeiselectricallyconnectedtothecase •Highreliability •MatchesallSi-Photodetectors •Hermeticallysealedpackage •SamepackageasSFH216,SFH400andFH480 Applications

OSRAMOSRAM GmbH

艾迈斯欧司朗欧司朗光电半导体

SiHFP460

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SIHFP460

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet

VishayVishay Siliconix

威世科技威世科技半导体

SIHFP460A

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SwitchModePower

VishayVishay Siliconix

威世科技威世科技半导体

SIHFP460LC

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

VishayVishay Siliconix

威世科技威世科技半导体

SiHFP460LC

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SIHFP460N

PowerMOSFET

PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS

VishayVishay Siliconix

威世科技威世科技半导体

SiHG460B

DSeriesPowerMOSFET

FEATURES •OptimalDesign   -LowAreaSpecificOn-Resistance   -LowInputCapacitance(Ciss)   -ReducedCapacitiveSwitchingLosses   -HighBodyDiodeRuggedness   -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation   -LowCost   -SimpleGateDriveCircuitry   

VishayVishay Siliconix

威世科技威世科技半导体

SIHG460B

DSeriesPowerMOSFETs

FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit(

VishayVishay Siliconix

威世科技威世科技半导体

SIHG460B

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

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