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JANSF2N7389	文件：128.74 Kbytes Page：8 Pages	TRANSISTORP-CHANNEL(BVdss=-100V,Rds(on)=0.30ohm,Id=-6.5A) InternationalRectifier’sRAD-HardHEXFETTMtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.ThesedeviceshavebeencharacterizedforbothTotalDoseandSingleEventEffec	IRF International Rectifier	IRF
JANSR2N7389	文件：128.74 Kbytes Page：8 Pages	TRANSISTORP-CHANNEL(BVdss=-100V,Rds(on)=0.30ohm,Id=-6.5A) InternationalRectifier’sRAD-HardHEXFETTMtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.ThesedeviceshavebeencharacterizedforbothTotalDoseandSingleEventEffec	IRF International Rectifier	IRF

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JANSF2N7389

文件：128.74 Kbytes

Page：8 Pages

TRANSISTORP-CHANNEL(BVdss=-100V,Rds(on)=0.30ohm,Id=-6.5A)

InternationalRectifier’sRAD-HardHEXFETTMtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.ThesedeviceshavebeencharacterizedforbothTotalDoseandSingleEventEffec

IRF

International Rectifier

IRF

JANSR2N7389

文件：128.74 Kbytes

Page：8 Pages

TRANSISTORP-CHANNEL(BVdss=-100V,Rds(on)=0.30ohm,Id=-6.5A)

IRF

International Rectifier

IRF

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