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MLD2N06CL

VOLTAGECLAMPEDCURRENTLIMITINGMOSFET

VOLTAGECLAMPEDCURRENTLIMITINGMOSFET62VOLTS(CLAMPED)RDS(on)=0.4OHMS TheMLD2N06CLisdesignedforapplicationsthatrequirearuggedpowerswitchingdevicewithshortcircuitprotectionthatcanbedirectlyinterfacedtoamicrocontrolunit(MCU).Idealapplicationsincludeautomotivef

MotorolaMotorola, Inc

摩托罗拉

MLD2N06CL

SMARTDISCRETESTMMOSFET2Amp,62Volts,LogicLevelN?묬hannelDPAK

TheMLD2N06CLisdesignedforapplicationsthatrequirearuggedpowerswitchingdevicewithshortcircuitprotectionthatcanbedirectlyinterfacedtoamicrocontrolunit(MCU).Idealapplicationsincludeautomotivefuelinjectordriver,incandescentlampdriverorotherapplicationswhereahig

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MLD2N06CLG

SMARTDISCRETESTMMOSFET2Amp,62Volts,LogicLevelN?묬hannelDPAK

TheMLD2N06CLisdesignedforapplicationsthatrequirearuggedpowerswitchingdevicewithshortcircuitprotectionthatcanbedirectlyinterfacedtoamicrocontrolunit(MCU).Idealapplicationsincludeautomotivefuelinjectordriver,incandescentlampdriverorotherapplicationswhereahig

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MLP2N06CL

SMARTDISCRETESTMMOSFET2Amps,62Volts,LogicLevelN?묬hannelTO??20

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MLP2N06CL

VOLTAGECLAMPEDCURRENTLIMITINGMOSFET

MotorolaMotorola, Inc

摩托罗拉

MLP2N06CLG

SMARTDISCRETESTMMOSFET2Amps,62Volts,LogicLevelN?묬hannelTO??20

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMDF2N06V

DUALTMOSMOSFET3.3AMPERES60VOLTS

TMOSVSO-8forSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Justasw

MotorolaMotorola, Inc

摩托罗拉

MMDF2N06VL

DUALTMOSMOSFET2.5AMPERES60VOLTS

TMOSV™SO-8forSurfaceMountN-ChannelEnhancement-modeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Just

MotorolaMotorola, Inc

摩托罗拉

MTDF2N06HD

N?묬hannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

RFL2N06

2A,50Vand60V,0.95Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFL2N06L

2A,60V,0.950Ohm,LogicLevel,N-ChannelPowerMOSFET

TheRFL2N06LN-channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.T

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFW2N06RLE

2A,60V,0.160Ohm,LogicLevel,N-ChannelPowerMOSFET

TheRFW2N06RLEN-Channel,logiclevel,ESDprotected,powerMOSFETismanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.TheRFW2N06RLEwasdesigned

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

STN2N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.21Ω ■AVALANCHERUGGEDTECHNOLOGY ■SOT-223CANBEWAVEORREFLOWSOLDERED ■AVAILABLEINTAPEANDREELONREQUEST ■150°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HARDDISKDRIVER

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

供应商型号品牌批号封装库存备注价格
N/A
2100
询价
SUNX
2308+
468013
一级代理,原装正品,公司现货!
询价
isc
2024
TO-220
5000
国产品牌isc,可替代原装
询价
ISC/固电
TO-220
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
SYNERGY
2018+
SMD
3000
SYNERGY专营射频芯片现货原装正品专营品牌
询价
SYNERGY
24+
SMD
3200
进口原装假一赔百
询价
SYNERGY
原厂封装
685
一级代理 原装正品假一罚十价格优势长期供货
询价
SYNERGY
23+
6000
全新原装
询价
Microsemi
1942+
N/A
908
加我qq或微信,了解更多详细信息,体验一站式购物
询价
MICROSEMI/美高森美
21+
SMARTFUSION2
6000
全新原装 现货 价优
询价
更多SF2N06L供应商 更新时间2024-5-23 10:20:00