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MLD2N06CL

SMARTDISCRETESTMMOSFET2Amp,62Volts,LogicLevelN?묬hannelDPAK

TheMLD2N06CLisdesignedforapplicationsthatrequirearuggedpowerswitchingdevicewithshortcircuitprotectionthatcanbedirectlyinterfacedtoamicrocontrolunit(MCU).Idealapplicationsincludeautomotivefuelinjectordriver,incandescentlampdriverorotherapplicationswhereahig

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MLD2N06CL

VOLTAGECLAMPEDCURRENTLIMITINGMOSFET

VOLTAGECLAMPEDCURRENTLIMITINGMOSFET62VOLTS(CLAMPED)RDS(on)=0.4OHMS TheMLD2N06CLisdesignedforapplicationsthatrequirearuggedpowerswitchingdevicewithshortcircuitprotectionthatcanbedirectlyinterfacedtoamicrocontrolunit(MCU).Idealapplicationsincludeautomotivef

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MLD2N06CLG

SMARTDISCRETESTMMOSFET2Amp,62Volts,LogicLevelN?묬hannelDPAK

TheMLD2N06CLisdesignedforapplicationsthatrequirearuggedpowerswitchingdevicewithshortcircuitprotectionthatcanbedirectlyinterfacedtoamicrocontrolunit(MCU).Idealapplicationsincludeautomotivefuelinjectordriver,incandescentlampdriverorotherapplicationswhereahig

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MLP2N06CL

VOLTAGECLAMPEDCURRENTLIMITINGMOSFET

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MLP2N06CL

SMARTDISCRETESTMMOSFET2Amps,62Volts,LogicLevelN?묬hannelTO??20

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MLP2N06CLG

SMARTDISCRETESTMMOSFET2Amps,62Volts,LogicLevelN?묬hannelTO??20

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMDF2N06V

DUALTMOSMOSFET3.3AMPERES60VOLTS

TMOSVSO-8forSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Justasw

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MMDF2N06VL

DUALTMOSMOSFET2.5AMPERES60VOLTS

TMOSV™SO-8forSurfaceMountN-ChannelEnhancement-modeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Just

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTDF2N06HD

N?묬hannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

RFL2N06

2A,50Vand60V,0.95Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

Intersil

Intersil Corporation

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