零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedin multipleco | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •Surfacemountable(orderasIRFR9020, SiHFR9020) •Straightleadoption(orderasIRFU9020, SiHFU9020) •Repetitiveavalancheratings •DynamicdV/dtrating •Simpledriverequirements •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseeww | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyand | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyand | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyand | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyand | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
23+ |
TO-3 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
SEI |
23+ |
DIP8COB |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
SEAWARD(思旺) |
2021+ |
SOT23-6 |
699 |
询价 | |||
SEAWARD(思旺) |
2447 |
PSOP8 |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
SEAWARD/思旺 |
23+ |
PSOP8 |
22820 |
原装正品,支持实单 |
询价 | ||
SURGING |
18+ |
SMD |
970 |
原装 |
询价 | ||
SUNBANK |
新 |
4 |
全新原装 货期两周 |
询价 | |||
思旺SE |
24+ |
SOT89TO252 |
393625 |
电源IC原装正品有优势 |
询价 | ||
SEAWARD |
22+ |
SOT-89 |
20000 |
保证原装正品,假一陪十 |
询价 |
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