1200V SiC Schottky Diode

The SiC Schottky Diode is an advanced new generation of high voltage silicon carbide diode family.\nThis technology combines the benefits of excellent low forward voltage and robustness.\nConsequently, the SiC Schottky Diode is suitable for various AC/DC power conversion in switching mode operation • No reverse recovery current\n• 175℃ Max junction temperature\n• Switching behavior independent of temperature;

Super

超致半导体

SIP

SENSIRI

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DIP

SENSIRION/盛思锐

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N/A

QUALCOMM

高通

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C&K

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