丝印：22A；Package：SOD-323；TRANSIENT VOLTAGE SUPPRESSOR

Features Unidirection:450 Watts peak pulse power per line(tp=8/20μs) Replacement for MLV (0805) Protects one power or I/O port Low clamping voltage Applied to the type 3V and 36V 61000-4-2 (ESD): Air 30kV, Contact 30kV

文件：395.8 Kbytes 页数：3 Pages

DAESAN

N-CHANNEL DEPLETION-MODE D-MOS FET

[TOPAZ SEMICONDUCTOR]

文件：100.37 Kbytes 页数：3 Pages

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2-WAY POWER DIVIDER SURFACE MOUNT MODEL

FEATURES: ► Excellent Performance ► Wide Bandwidth ► Small Size, Surface Mount ► Moderate Power ► Lead Free RoHS Compliant APPLICATIONS: ►Signal Splitting & Low Power Combining

文件：552.69 Kbytes 页数：3 Pages

SYNERGY

N-CHANNEL DEPLETION-MODE D-MOS FET

[TOPAZ SEMICONDUCTOR]

文件：100.37 Kbytes 页数：3 Pages

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N-CHANNEL DEPLETION-MODE D-MOS FET

[TOPAZ SEMICONDUCTOR]

文件：100.37 Kbytes 页数：3 Pages

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P-CHANNEL ENHANCEMENT MODE D MOS FET

[TOPAZ SEMICONDUCTOR] FEATURES ■ Ultra-Low Channel OFF leakage,

文件：85.75 Kbytes 页数：3 Pages

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P-CHANNEL ENHANCEMENT MODE D MOS FET

[TOPAZ SEMICONDUCTOR] FEATURES ■ Ultra-Low Channel OFF leakage,

文件：85.75 Kbytes 页数：3 Pages

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P-CHANNEL ENHANCEMENT MODE D MOS FET

[TOPAZ SEMICONDUCTOR] FEATURES ■ Ultra-Low Channel OFF leakage,

文件：85.75 Kbytes 页数：3 Pages

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Chip Type 2C2222A Geometry 0400 Polarity NPN

Chip type 2C2222A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applica tions.

文件：29.63 Kbytes 页数：1 Pages

Semicoa

Chip Type 2C2222A Geometry 0400 Polarity NPN

Chip type 2C2222A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applica tions.

文件：29.63 Kbytes 页数：1 Pages

Semicoa