防丢器和无线烟感

Semi-high

芯卓

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe ASI SD1169 is a Common Emitter Device Designed for Class C Amplifier Applications in HF Land Mobile Radios.FEATURES INCLUDE:\n• Aluminum Metalization\n• Emitter Ballasting

ASI Semiconductor

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1169 is a Common Emitter Device Designed for Class C Amplifier Applications in HF Land Mobile Radios. FEATURES INCLUDE: • Aluminum Metalization • Emitter Ballasting

文件：23.12 Kbytes 页数：1 Pages

ASI

25A / 1000V THREE PHASE BRIDGE RECTIFIER ASSEMBLY ULTRA FAST - 70 ns

Features: • Higher Blocking Voltage Available. Contact Factory. • Average Output Current 25 Amps • Low Reverse Leakage Current • Constructed with Void-free, Hermetically Sealed Discretes • Aluminum Case for Maximum Thermal Conductivity • Small Package Size (1.500 x 0.875 x 0.310”) • TX and

文件：45.37 Kbytes 页数：2 Pages

SSDI

THREE PHASE BRIDGE RECTIFIER ASSEMBLY ULTRA FAST

文件：46.18 Kbytes 页数：2 Pages

SSDI

25A / 1000V THREE PHASE BRIDGE RECTIFIER ASSEMBLY ULTRA FAST - 70 ns

Features: • Higher Blocking Voltage Available. Contact Factory. • Average Output Current 25 Amps • Low Reverse Leakage Current • Constructed with Void-free, Hermetically Sealed Discretes • Aluminum Case for Maximum Thermal Conductivity • Small Package Size (1.500 x 0.875 x 0.310”) • TX and

文件：45.37 Kbytes 页数：2 Pages

SSDI