DAM110N65G

N-ChannelEnhancementModeMOSFET

FCB110N65F

iscN-ChannelMOSFETTransistor

FCH110N65F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=35A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=110mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

FCH110N65F

N-ChannelSuperFET짰IIFRFET짰MOSFET

Description SuperFET®IIMOSFETisFairchildSemiconductor’sbrand-newhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,provides

FCP110N65F

N-ChannelSuperFET짰IIFRFET짰MOSFET

Description SuperFET®IIMOSFETisFairchildSemiconductor’sbrand-newhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,provides

FCP110N65F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=35A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=110mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

IXXN110N65C

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.35V@IC=110A ·HighCurrentHandlingCapability ·HighPowerDensity ·ShortCircuitCapabiltiy APPLICATIONS ·SynchronousRectificationinSMPS ·PowerInverters ·UPS,PFC ·HighFrequencyPowerInverters

TK110N65Z

MOSFETsSiliconN-ChannelMOS

Applications •SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.092Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=1.02mA)