SCM474K122H8P29-F电容器的薄膜电容器规格书PDF中文资料

SCM474K122H8P29-F属于电容器的薄膜电容器。由Cornell Dubilier Electronics制造生产的SCM474K122H8P29-F薄膜电容器薄膜电容器是用于存储电荷的双片式器件。这些器件由沉积在基底上并由电介质分隔的薄膜层组成。电容值范围为 0.05 pF 至 500 mF，电压为 2.5 V 至 100 V，封装尺寸为 0201 至 1210，容差为 ±0.01 pF 至 ±5％。

Discharge Restrictive De-coupling

The circuit in Figure 1 operates on the same principles as the de-coupling capacitor, but only during turn-off switching. As the IGBT turns off, energy trapped in the loop inductance is transferred to the capacitor. The diode blocks oscillations from occurring and excess charge on the capacitor is discharged through the external resistor.

• 1 or 2 wire taps for connecting external resistor

• Flame resistant case and epoxy, meets UL 94V0

• Other terminal pitches and capacitance values available.

Highlights

• Mount directly to the IGBT module

• Low inductance

• Low Loss

• Hyperfast diodes integrated into package

Applications

Use style SCM as a discharge restrictive de-coupling to

protect dual IGBT modules from overvoltage, Figure

1. Style SCM may also be used as an “N” or “P” type

snubber component for a clamp snubber where single

IGBT modules are used, Figure 2.