首页 >SC6362AES>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SBE®320/SBX®350ConnectorsUpto550Amps SBE®andSBX®connectorscanintegrateupto8auxiliarypower /signalcontactsalongwiththetwoprimarypowercircuits. Sequencingwithinauxiliarypositionsispossibleusingthe4pin lengthsavailableinthe1x4auxiliaryconnector.SBE®andSBX® offertouchsafehousings. •SilverPla | APP Anderson Power Products, Inc. | APP | ||
Component12X1PAIR | ALPHAWIREAlpha Wire 阿尔法电线 | ALPHAWIRE | ||
438PCBBarrierTerminalStrip,600V | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
438PCBBarrierTerminalStrip,600V | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
438PCBBarrierTerminalStrip,600V | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
VTRCOLORAFCCIRCUIT | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
VTRCOLORAFCCIRCUIT | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
30VN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,5.2A,RDS(ON)=46mW@VGS=10V. RDS(ON)=52mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,20.7A,RDS(ON)=45mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=52mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
