TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for low noise amplifier at VHF, UHF and CATV band.

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DCCOM

道全

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description\nDesigned for low noise amplifier at VHF, UHF and CATV band.

DC Components

道全

High Voltage PNP Transistor

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SSDI

1 AMP, 500 Volts High Voltage PNP Transistor

Features: • BVCER to 500 Volts • Low Leakage at High Temperature • High Linear Gain, Low Saturation Voltage • 200°C Operating Temperature • Gold Eutectic Die Attach • TX, TXV, S-Level Screening Available • Designed for Complementary Use with SFT5015 • Replacement for 2N5094 and 2N5096 with

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SSDI

N-channel General purpose

文件：13.24 Kbytes 页数：1 Pages

Sanken

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