Surface Mount Schottky Power Rectifier

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or

文件：184.62 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or

文件：184.62 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

1.0 A, 40 V, Schottky Power Rectifier, Surface Mount

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectif • Small Compact Surface Mountable Package with J-Bend Leads\n• Rectangular Package for Automated Handling\n• Very Low Forward Voltage Drop5 Volts Max @ 1.0 A, TJ5°C)\n• Guardring for Stress ProtectionMechanical Characteristics:\n• Weight: 95 mg (approximately)\n• Lead and Mounting Surface Tempe;

ONSEMI

安森美半导体

Package：DO-214AA，SMB；包装：带盒（TB） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 1A 1202-SMB2

ONSEMI

安森美半导体

Package：DO-214AA，SMB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：REC SMB SPECIAL SHTKY

ONSEMI

安森美半导体